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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. CHT4126PT CURRENT 200 mAmpere FEATURE * Surface mount package. (SOT-23) .041 (1.05) .033 (0.85) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. .110 (2.80) .082 (2.10) .119 (3.04) (1) .066 (1.70) (3) CONSTRUCTION * PNP Silicon Transistor (2) MARKING * QT .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1) B (3) C .045 (1.15) .033 (0.85) (2) E .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 2. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 2 CONDITIONS open emitter open base open collector - - - - - -65 - -65 MIN. MAX. -25 -25 -4 -200 350 +150 150 +150 UNIT V V V mA mW C C C 2004-8 RATING CHARACTERISTIC CURVES ( CHT4126PT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current emitter cut-off current DC current gain DC current gain collector-emitter saturation base-emitter saturation voltage output capacitance input capacitance transition frequency CONDITIONS IC = -10uA ; IE = 0A IC = -1mA ; IB = 0A IE = -10uA ; IC = 0A IE = 0; VCB = -20 V IC = 0; VEB = - 3 V IC = -50 mA; VCE I= -1V; note 3 IC = -2 mA; VCE = -1V IC = -50 mA; IB = -5 mA IC = -50 mA; IB = -5 mA MIN. -25 -25 -4 - - 60 120 - - - - - -50 -50 - 360 -400 -950 4.5 10 - mV mV pF pF MHz MAX. V V V nA nA UNIT V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE hFE VCEsat VBEsat Cobo Cibo fT Note IE = ie = 0; VCB = - 5 V ; f = 1 MHz - IE = ie = 0; VCB = - 5 V ; f = 1 MHz - IC = -10mA; VCE = - 2 0 V ; f = 100 MHz 250 3. Pulse test: tp 300 s; 0.02. RATING CHARACTERISTIC CURVES ( CHT4126PT ) Typical Characteristics V CESAT - COLLECTOR EMITTER VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 250 V CE = 1 .0V 125 C Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 0.2 0.15 0.1 125C 25 C = 10 200 150 25 C 100 - 40 C 0.05 0 - 40 C 50 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 1 10 100 I C - COLLECTOR CURRENT (mA) 200 VBE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 0.8 25 C Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 C = 10 - 40 C 0.6 0.4 0.2 0 125 C 0.6 0.4 0.2 0 0.1 25 C 125 C V CE = 1V 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 1 10 I C - COLLECTOR CURRENT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) 100 V 10 CB Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 10 C obo = 25V CAPACITANCE (pF) 8 6 4 2 0 0.1 C ibo 1 0.1 0.01 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( C) 125 1 REVERSE BIAS VOLTAGE (V) 10 RATING CHARACTERISTIC CURVES ( CHT4126PT ) Typical Characteristics Noise Figure vs Frequency 6 V CE = 5.0V NF - NOISE FIGURE (dB) 5 4 3 2 I C = 1.0 mA, R S = 200 I C = 100 A, R S = 200 Noise Figure vs Source Resistance 12 NF - NOISE FIGURE (dB) 10 8 6 4 I C = 100 A I C = 1.0 mA V CE = 5.0V f = 1.0 kHz 1 0 0.1 I C = 100 A, R S = 2.0 k 2 0 0.1 1 10 f - FREQUENCY (kHz) 100 1 10 R S - SOURCE RESISTANCE ( k ) 100 Switching Times vs Collector Current 500 ts Turn On and Turn Off Times vs Collector Current 500 t off Ic t on I B1 = 10 100 TIME (nS) 100 TIME (nS) tf t on 10 I B1 = I B2 = Ic 10 tr 10 VBE(OFF) = 0.5V t off I = I = B1 B2 Ic 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 100 1 1 I 10 - COLLECTOR CURRENT (mA) 100 Output Admittance h oe - OUTPUT ADMITTANCE ( mhos) 1000 V CE = 10 V f = 1.0 kHz h fe - CURRENT GAIN 1000 500 Current Gain V CE = 10 V f = 1.0 kHz 200 100 50 100 20 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 |
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